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详细摘要：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

详细摘要：The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

详细摘要：Synthetic single crystal Tin lead disulfide （PbSnS?） is a special member of layered transitional metal dichalcogenides.

详细摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

详细摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals

详细摘要：NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's magnetic response in the monolayer limit remain largely unknown.

详细摘要：ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, exhibiting Fermi liquid behavior with two Fermi pockets at low temperatures.

详细摘要：Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV.

详细摘要：Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA.

详细摘要：* environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 displays metallic and superconducting behavior.

详细摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoS2 crystals.

详细摘要：Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

详细摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

详细摘要：一步转移石墨烯（进口/1*1cm单层） Trivial Transfer Graphene

详细摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

详细摘要：Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

详细摘要：一步转移石墨烯（5*5cm单层） Trivial Transfer Graphene

详细摘要：Single crystal ReS? （Rhenium disulfide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

详细摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

详细摘要：铜基底石墨烯（进口） Graphene on Copper Foil
制备方法：气相沉积法
化学气相沉积石墨烯层：1/2/3~5/6~8
尺寸：可定制