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详细摘要：Single crystal ReSxSe2（1-x） alloy rystals are developed at our facilities using chemical vapor transport or flux zone technique methods.

详细摘要：Bulk PdSe2 （palladium diselenide） has been predicted to exhivit 30 meV band gap which increases to 1.43 eV indirect gap （theoretical）.

详细摘要：制备方法：
层间催化裂解法
厚度：~2nm
直径：5~10um
纯度：98%
含氧量：1.44%
电导率：~2597 s/cm

详细摘要：Our WSSe alloys with the chemical formula WS2xSe2（1-x） crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

详细摘要：P-type electronically doped Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.

详细摘要：14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

详细摘要：Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

详细摘要：Platinum diselenide （PtSe2） is a member of transition metal dichalcogenide （TMDCs） family with the MX2 formula.

详细摘要：Single crystal ReSe? （Rhenium diselenide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure anisotro

详细摘要：Magnetic semiconductor ZnPSe3 has a monoclinic structure with the factor group C2h.

详细摘要：高比表面积氧化石墨烯 High Surface Area Graphene Oxide
制备方法：改良的H法
高表面积氧化石墨烯
直径：1 ~ 5um
厚度：0.8~1.2nm
单层比：99%
纯度：99%
比表面积（BET）：100平方米/克
堆积密度：0.009g/cm3
所在地：上海上海市      更新时间：2025-03-30 在线留言

详细摘要：* environmentally stable metallic NbSe2 crystals: In the bulk form, niobium diselenide is metallic.

详细摘要：In2Se3 single crystals were grown using Physical vapor transport （PVT） as well as Bridgman technique.

详细摘要：ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure.

详细摘要：单层石墨烯（进口） Single Layer Graphene
高比表面积石墨烯
制备方法：热剥离还原与氢化还原
BET比表面积（平方米/克）：400~1000
电阻率（Ω?cm）≤0.30
分散性：利用声波降解法可以在大多数的溶液中进行再分散

详细摘要：Our MoSe2 crystals are grown using two different techniques through chemical vapor transport （CVT） or flux zone growth （see description of these two methods below）.

详细摘要：Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.

详细摘要：The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique.

详细摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoSe2 crystals.

详细摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimi