亚洲精品综合日韩中文字幕网站_精品综合久久久久97_中文在线天堂网www_久久精品免费一区二区三区_91久久国产综合精品女同国语_久久资源总站在线国产成人

泰州巨纳新能源有限公司
中级会员 | 第4年

13651969369

当前位置:泰州巨纳新能源有限公司>>二维材料>>硒化物晶体>> n-type WSe2 crystals N型二硒化钨晶体

n-type WSe2 crystals N型二硒化钨晶体

参   考   价: 8019.05

订  货  量: ≥1 片

具体成交价以合同协议为准

产品型号

品       牌2D Semiconductors

厂商性质生产商

所  在  地泰州市

更新时间:2024-06-03 10:36:00浏览次数:895次

联系我时,请告知来自 化工仪器网
同类优质产品更多>
供货周期 现货 应用领域 环保,化工,能源,综合
14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field. Our n-type WSe2 crystals are doped with Re or Au atoms at ~1E17-1E18 cm-3 range. However, if your research  requires other types or concentration of dopants please contact us. Intentionally doped WSe2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type WSe2 crystals doped with Au, Re, Nb, or other transition metal atoms. Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.

Typical characteristics of WSe2 crystals from 2Dsemiconductors


Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 


会员登录

×

请输入账号

请输入密码

=

请输验证码

收藏该商铺

X
该信息已收藏!
标签:
保存成功

(空格分隔,最多3个,单个标签最多10个字符)

常用:

提示

X
您的留言已提交成功!我们将在第一时间回复您~
拨打电话
在线留言
韶山市| 和龙市| 宜兴市| 西昌市| 武山县| 江津市| 台湾省| 永丰县| 南涧| 建水县| 西乌| 怀集县| 鹤岗市| 同德县| 长白| 西充县| 南江县| 汝南县| 中阳县| 昌都县| 汉沽区| 当涂县| 卢氏县| 嵩明县| 尉犁县| 揭西县| 荣成市| 兴国县| 光泽县| 三明市| 柞水县| 新晃| 利辛县| 高安市| 马龙县| 石台县| 九台市| 濮阳县| 色达县| 弋阳县| 莱州市|