亚洲精品综合日韩中文字幕网站_精品综合久久久久97_中文在线天堂网www_久久精品免费一区二区三区_91久久国产综合精品女同国语_久久资源总站在线国产成人

產(chǎn)品展廳收藏該商鋪

您好 登錄 注冊

當(dāng)前位置:
上海巨納科技有限公司>>二維材料>>二維材料薄膜>>基于二氧化硅襯底的全區(qū)域覆蓋單層二硫化鉬

基于二氧化硅襯底的全區(qū)域覆蓋單層二硫化鉬

返回列表頁
  • 基于二氧化硅襯底的全區(qū)域覆蓋單層二硫化鉬

  • 基于二氧化硅襯底的全區(qū)域覆蓋單層二硫化鉬

  • 基于二氧化硅襯底的全區(qū)域覆蓋單層二硫化鉬

收藏
舉報
參考價 面議
具體成交價以合同協(xié)議為準(zhǔn)
  • 型號
  • 品牌 其他品牌
  • 廠商性質(zhì) 生產(chǎn)商
  • 所在地 泰州市

在線詢價 收藏產(chǎn)品 加入對比 查看聯(lián)系電話

更新時間:2025-05-08 11:46:03瀏覽次數(shù):1680

聯(lián)系我們時請說明是化工儀器網(wǎng)上看到的信息,謝謝!

產(chǎn)品簡介

供貨周期 一周    
This product contains full area coverage MoS2 monolayers on SiO2/Si substrates.

詳細介紹

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity.

 

 

Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Thermal oxide (SiO2/Si) substrates

Coverage

Full Coverage Monolayer

Electrical properties

1.85 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.313 nm, c = 1.230 nm,

α = β = 90°, γ = 120°

Production method

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS

Specifications

1)     Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates.

2)    . One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)     Atomically smooth surface with roughness < 0.2 nm.

4)     Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.

5)    99.9995% purity as determined by nano-SIMS measurements

6)     Repeatable Raman and photoluminescence response

7)     High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)     SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.

9)     MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

 

Supporting datasets [for 100% Full area coverage on SiO2/Si]

 

 

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers

 

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios

 

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

收藏該商鋪

登錄 后再收藏

提示

您的留言已提交成功!我們將在第一時間回復(fù)您~

對比框

產(chǎn)品對比 產(chǎn)品對比 聯(lián)系電話 二維碼 在線交流

掃一掃訪問手機商鋪
86-021-56830191
在線留言
北京市| 日喀则市| 理塘县| 塘沽区| 花莲市| 丹寨县| 永登县| 中宁县| 本溪| 茂名市| 龙川县| 黎川县| 阿拉善左旗| 泰宁县| 铁岭市| 兴安盟| 永宁县| 岢岚县| 密云县| 且末县| 临沭县| 疏附县| 巴楚县| 渭源县| 池州市| 乌兰察布市| 彰化市| 胶州市| 东海县| 互助| 阿坝| 芦山县| 隆化县| 额敏县| 浦江县| 临洮县| 揭东县| 永和县| 巴中市| 丰宁| 灵武市|