二硫化铼晶体 ReS2 （Rhenium Disulfide）
晶体结构：三斜晶晶体尺寸：~8毫米
电学性能：N型半导体
晶体结构：三斜晶系
晶胞参数：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶体类型：合成
晶体纯度：＞99.995%

二硫化铼晶体 ReS2 (Rhenium Disulfide)
晶体结构：三斜晶晶体尺寸：~8毫米
电学性能：N型半导体
晶体结构：三斜晶系
晶胞参数：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

 

Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.