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詳細(xì)摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細(xì)摘要： Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk ...

詳細(xì)摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細(xì)摘要： 100% environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 dis...

詳細(xì)摘要： Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

詳細(xì)摘要： ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

詳細(xì)摘要： Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

詳細(xì)摘要： NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

詳細(xì)摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細(xì)摘要： Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly lumine...

詳細(xì)摘要： Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細(xì)摘要： 14 years of growth optimization in chemical vapor transport （CVT） as well as flu...

詳細(xì)摘要： Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk an...

詳細(xì)摘要： Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed...

詳細(xì)摘要： More than a decade of growth optimization in chemical vapor transport （CVT） as w...

詳細(xì)摘要： Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical...

詳細(xì)摘要： The only commercially available TlGaS2 vdW crystals have been synthesized at our...

詳細(xì)摘要： The only commercially available TlInS2 vdW crystals have been synthesized at our...

詳細(xì)摘要： Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

詳細(xì)摘要： Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2...